Semiconductor package

ABSTRACT

A transistor (2) and a matching circuit substrate (3-6) are provided on a base plate (1) and connected to each other. A frame (15) is provided on the base plate (1) and surrounds the transistor (2) and the matching circuit substrate (3-6). The frame (15) has a smaller linear expansion coefficient than that of the base plate (1). A screwing portion (17) is provided in the frame (15). A size of the base plate (1) is smaller than that of the frame (15).

FIELD

The present disclosure relates to a semiconductor package.

BACKGROUND

In a semiconductor amplifier used in a microwave band, a semiconductorpackage for a transistor of a high-power internal matching circuit typeis used. Conventionally, the semiconductor package has been mounted in ahousing of the semiconductor amplifier by making a threaded connectionat a screwing portion of a base plate of the semiconductor package(e.g., see Patent Literature 1).

CITATION LIST Patent Literature [PTL 1] JP 2014-049726 A SUMMARYTechnical Problem

In order to provide the screwing portion, it has hitherto been necessaryto increase the size of the base plate. However, the base plate has alarger linear expansion coefficient than other members such as amatching circuit substrate or a transistor to be mounted. Due to thedifference in linear expansion coefficient, the semiconductor packagemay warp in high-temperature treatment at the time of mounting orpackaging these members. Accordingly, the problem has been that, whenthe semiconductor package is mounted into the housing of thesemiconductor amplifier, a gap is generated between the lower surface ofthe base plate and the housing to change a path from the transistor tothe housing which serves as a ground, thus causing decreases inhigh-frequency characteristics and reliability.

An object of the present invention, which has been made to solve theproblem as thus described, is to obtain a semiconductor package capableof improving the high-frequency characteristics and reliability.

Solution to Problem

A semiconductor package according to the present disclosure includes: abase plate; a transistor and a matching circuit substrate which areprovided on the base plate and connected to each other; and a frameprovided on the base plate and surrounding the transistor and thematching circuit substrate, wherein the frame has a smaller linearexpansion coefficient than that of the base plate, a screwing portion isprovided in the frame, and a size of the base plate is smaller than thatof the frame.

Advantageous Effects of Invention

In the present disclosure, the size of the frame having a small linearexpansion coefficient is increased and the screwing portion is providedin the frame. This eliminates the need to provide the screwing portionin the base plate, and hence the size of the base plate having a largelinear expansion coefficient can be made smaller than that of the frame.It is thereby possible to prevent the warpage of the base plate afterthe matching circuit substrates and the transistor have been mounted.Therefore, the adhesion between the lower surface of the base plate andthe housing of the semiconductor amplifier increases to enable thegrounding, so that it is possible to improve the high-frequencycharacteristics and reliability.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a top view illustrating a semiconductor package according to afirst embodiment.

FIG. 2 is a cross-sectional view along I-II of FIG. 1.

FIG. 3 is a top view illustrating the inside of the semiconductorpackage according to the first embodiment.

FIG. 4 is a perspective view illustrating a semiconductor packageaccording to the comparative example.

FIG. 5 is a perspective view illustrating the displacement in theZ-direction of the back surface of the semiconductor package accordingto the comparative example.

FIG. 6 is a side view of the semiconductor package according to thecomparative example.

FIG. 7 is a cross-sectional view illustrating a semiconductor packageaccording to a second embodiment.

FIG. 8 is a cross-sectional view illustrating a semiconductor packageaccording to a third embodiment.

FIG. 9 is a cross-sectional view illustrating a semiconductor packageaccording to a fourth embodiment.

FIG. 10 is a bottom view illustrating the semiconductor packageaccording to the fourth embodiment.

DESCRIPTION OF EMBODIMENTS

A semiconductor package according to the embodiments of the presentdisclosure will be described with reference to the drawings. The samecomponents will be denoted by the same symbols, and the repeateddescription thereof may be omitted.

First Embodiment

FIG. 1 is a top view illustrating a semiconductor package according to afirst embodiment. FIG. 2 is a cross-sectional view along I-II of FIG. 1.FIG. 3 is a top view illustrating the inside of the semiconductorpackage according to the first embodiment. This semiconductor package isa transistor of a high-power internal matching circuit type.

A transistor 2 and a matching circuit substrates 3 to 6 are provided ona base plate 1. An input lead terminal 7 is connected to wiring of thematching circuit substrate 3 with an Au wire 8. The wiring of thematching circuit substrate 3 and the wiring of the matching circuitsubstrate 4 are connected with an Au wire 9. The wiring of the matchingcircuit substrate 4 is connected to a control electrode of thetransistor 2 with an Au wire 10. A lower electrode of the transistor 2is connected to the base plate 1. An upper electrode of the transistor 2is connected to wiring of the matching circuit substrate 5 with an Auwire 11. The wiring of the matching circuit substrate 5 and the wiringof the matching circuit substrate 6 are connected with an Au wire 12.The wiring of the matching circuit substrate 6 is connected to an outputlead terminal 14 with an Au wire 13.

A frame 15 is provided on the base plate 1, surrounding the transistor 2and the matching circuit substrates 3 to 6. A cap 16 is provided on theframe 15, covering the transistor 2 and the matching circuit substrates3 to 6 from above. The base plate 1 is made of CuMo having a linearexpansion coefficient of 9.1 [10−6/K]. The frame 15 and the cap 16 aremade of Kovar having a linear expansion coefficient of 5.2 [10−6/K].Therefore, the frame 15 and the cap 16 have a smaller linear expansioncoefficient than that of the base plate 1.

Screwing portions 17 are provided in the frame 15. The screwing portions17 are notches, two each of which is provided on each of two opposingsides of the frame 15. A screw 18 is passed through the screwing portion17 to threadedly secure the semiconductor package onto a housing 19 ofthe semiconductor amplifier.

Subsequently, the effect of the present embodiment will be described incomparison with a comparative example. FIG. 4 is a perspective viewillustrating a semiconductor package according to the comparativeexample. FIG. 5 is a perspective view illustrating the displacement inthe Z-direction of the back surface of the semiconductor packageaccording to the comparative example. FIG. 6 is a side view of thesemiconductor package according to the comparative example. In thecomparative example, for providing the screwing portion 17 in the baseplate 1 of the semiconductor package, it is necessary to increase thesize of the base plate 1 having a large linear expansion coefficient.Hence warpage occurs in the semiconductor package, so that when thesemiconductor package is mounted into the housing 19 of thesemiconductor amplifier, a gap is generated between the lower surface ofthe base plate 1 and the housing 19 to change a path from the transistor2 to the housing 19 which serves as a ground, thus causing decreases inhigh-frequency characteristics and reliability.

In contrast, in the present embodiment, the size of the frame 15 havinga small linear expansion coefficient is increased and the screwingportion 17 is provided in the frame 15. This eliminates the need toprovide the screwing portion 17 in the base plate 1, and hence the sizeof the base plate 1 having a large linear expansion coefficient can bemade smaller than that of the frame 15. It is thereby possible toprevent the warpage of the base plate 1 after the matching circuitsubstrates 3 to 6 and the transistor 2 have been mounted. Therefore, theadhesion between the lower surface of the base plate 1 and the housing19 of the semiconductor amplifier increases to enable the grounding, sothat it is possible to improve the high-frequency characteristics andreliability. Further, since the frame 15 above the base plate 1 isthreadedly secured onto the housing 19 of the semiconductor amplifier, acorrective force for the warpage of the base plate 1 is larger than thecase in which the base plate 1 is threadedly secured.

Second Embodiment

FIG. 7 is a cross-sectional view illustrating a semiconductor packageaccording to a second embodiment. In the present embodiment, the size ofthe cap 16 is increased, and the screwing portion 17 is provided. Then,the size of the base plate 1 having a large linear expansion coefficientis made smaller than that of the cap 16. It is thereby possible toprevent the warpage of the base plate 1. Therefore, the adhesion betweenthe lower surface of the base plate 1 and the housing 19 of thesemiconductor amplifier increases to enable the grounding, so that it ispossible to improve the high-frequency characteristics and reliability.Further, since the cap 16 above the base plate 1 is threadedly securedonto the housing 19 of the semiconductor amplifier, a corrective forcefor the warpage of the base plate 1 is larger than the case in which thebase plate 1 is threadedly secured.

Third Embodiment

FIG. 8 is a cross-sectional view illustrating a semiconductor packageaccording to a third embodiment. The screwing portion 17 is provided inthe base plate 1 in the present embodiment. A ceramic substrate 20 isembedded in a groove provided on the lower surface of the base plate 1.The ceramic substrate 20 has the same material quality (i.e., linearexpansion coefficient), thickness, and size as those of the matchingcircuit substrates 3 to 6. It is thereby possible to prevent the warpageof the base plate 1. Therefore, the adhesion between the lower surfaceof the base plate 1 and the housing 19 of the semiconductor amplifierincreases to enable the grounding, so that it is possible to improve thehigh-frequency characteristics and reliability. However, the ceramicsubstrate 20 with larger thermal resistance than that of the base plate1 is not disposed directly below the transistor 2 so as to maintain thethermal dissipation of the transistor 2.

Fourth Embodiment

FIG. 9 is a cross-sectional view illustrating a semiconductor packageaccording to a fourth embodiment. FIG. 10 is a bottom view illustratingthe semiconductor package according to the fourth embodiment. Thescrewing portion 17 is provided in the base plate 1 in the presentembodiment. The base plate 1 includes a first metal 21 made of CuMo anddisposed directly below the transistor 2, and a second metal 22 made ofmolybdenum or the like having a smaller linear expansion coefficient andlarger thermal resistance than those of the first metal 21.

By incorporating the second metal 22 having a small linear expansioncoefficient into the base plate 1, it is possible to prevent the warpageof the base plate 1. Therefore, the adhesion between the lower surfaceof the base plate 1 and the housing 19 of the semiconductor amplifierincreases to enable the grounding, so that it is possible to improve thehigh-frequency characteristics and reliability.

Further, the thermal dissipation is ensured by placing the first metal21 with small thermal resistance directly below the transistor 2.Specifically, the heat of the transistor 2 is diffused through a regionthat spreads at an angle of 45 degrees from the lower surface of thetransistor 2 to the lower surface of the base plate 1. Hence the secondmetal 22 with a small linear expansion coefficient is not provided in aregion where the thermal resistance is affected but provided in a regionwhere the thermal resistance is not affected.

REFERENCE SIGNS LIST

1 base plate; 2 transistor; 3 to 6 matching circuit substrate; 15 frame;16 cap; 17 screwing portion; 20 ceramic substrate; 21 first metal; 22second metal

1. A semiconductor package comprising: a base plate; a transistor and amatching circuit substrate which are provided on the base plate andconnected to each other; and a frame provided on the base plate andsurrounding the transistor and the matching circuit substrate, whereinthe frame has a smaller linear expansion coefficient than that of thebase plate, a screwing portion is provided in the frame, and a size ofthe base plate is smaller than that of the frame.
 2. A semiconductorpackage comprising: a base plate; a transistor and a matching circuitsubstrate which are provided on the base plate and connected to eachother; a frame provided on the base plate and surrounding the transistorand the matching circuit substrate; and a cap provided on the frame andcovering the transistor and the matching circuit substrate from above,wherein the frame and the cap have a smaller linear expansioncoefficient than that of the base plate, a screwing portion is providedin the cap, and a size of the base plate is smaller than that of thecap.
 3. A semiconductor package comprising: a base plate having an uppersurface and a lower surface opposed to each other; a transistor and amatching circuit substrate which are provided on the upper surface ofthe base plate and connected to each other; and a ceramic substrateprovided on the lower surface of the base plate and having same materialquality, thickness, and size as those of the matching circuit substrate.4. The semiconductor package according to claim 3, wherein the ceramicsubstrate is not disposed directly below the transistor.
 5. (canceled)6. (canceled)